Publikationsliste

Statistik: [externer Link folgt] google scholar [h 14] / [externer Link folgt] scopus [h 12] / [externer Link folgt] researcherID [h 12].
Profile: [externer Link folgt]orcid / [externer Link folgt]researchgate.


Referierte Artikel in Fachzeitschriften:

[34] D. Friedrich, P. Sippel, O. Supplie, T. Hannappel, R. Eichberger:
Two-photon photoemission spectroscopy for studying energetics and electron dynamics at semiconductor interfaces,
Physica Status Solidi A, accepted, 2019.
Feature Article

[33] A. Lenz, O. Supplie, E. Lenz, P. Kleinschmidt, T. Hannappel:
Interface of GaP/Si(001) and antiphase boundary facet-type determination,
Journal of Applied Physics 125, p. 045304, 2019.
[externer Link folgt] doi: 10.1063/1.5080547

[32] M. Steidl, K. Schwarzburg, B. Galiana, T. Kups, O. Supplie, P. Kleinschmidt, G. Lilienkamp, T. Hannappel: MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure,
Nanotechnology 30, p. 104002, 2019.
[externer Link folgt] doi: 10.1088/1361-6528/aaf607

[31] O. Supplie, O. Romanyuk, C. Koppka, M. Steidl, A. Nägelein, A. Paszuk, A. Dobrich, L. Winterfeld, P. Kleinschmidt, E. Runge, T. Hannappel: Metalorganic Vapor Phase Epitaxy of III-V-on-Silicon: Experiment & Theory,
Progress in Crystal Growth and Characterization of Materials 64, p. 103, 2018.
[externer Link folgt]doi: 10.1016/j.pcrysgrow.2018.07.002
Invited Review

[30] L. Winterfeld, C. Koppka, D. Abou-Ras, P. Kleinschmidt, O. Supplie, T. Hannappel, E. Runge: Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111),
Physical Review Materials 2, p. 124601, 2018.
[externer Link folgt]doi: 10.1103/PhysRevMaterials.2.124601
Editors' Suggestion

[29] S. Shokhovets, O. Supplie, C. Koppka, S. Krischok, T. Hannappel: Optical constants and origin of the absorption edge of GaPN lattice-matched to Si,
Physical Review B 98, p. 075205, 2018.
[externer Link folgt]doi: 10.1103/PhysRevB.98.075205

[28] A. Paszuk, O. Supplie, P. Kleinschmidt, S. Brückner, M. Nandy, B. Kim, Y. Nakano, M. Sugiyama, T. Hannappel: In situ control of dimer orientation on As-modified Si(100) surfaces in MOVPE ambience,
Applied Surface Science 462, p. 1002, 2018.
[externer Link folgt]doi: 10.1016/j.apsusc.2018.07.181

[27] S. Brückner, O. Supplie, A. Dobrich, P. Kleinschmidt, T. Hannappel: Control over dimer orientations on vicinal Si(100) surfaces in H2 ambient: Kinetics vs. energetics,
Physica Status Solidi B 255, p. 1700493, 2018.
[externer Link folgt]doi: 10.1002/pssb.201700493
[externer Link folgt][back cover]
Feature Article

[26] B. Kim, K. Toprasertpong, A. Paszuk, O. Supplie, Y. Nakano, T. Hannappel, M. Sugiyama: GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells,
Solar Energy Materials & Solar Cells 180, p. 303, 2018.
[externer Link folgt]doi: 10.1016/j.solmat.2017.06.060

[25] A. Paszuk, O. Supplie, B. Kim, S. Brückner, M. Nandy, A. Heinisch, P. Kleinschmidt, Y. Nakano, M. Sugiyama, T. Hannappel: GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation,
Solar Energy Materials & Solar Cells 180, p. 343, 2018.
[externer Link folgt]doi: 10.1016/j.solmat.2017.07.032

[24] O. Supplie, MM. May, S. Brückner, N. Brezhneva, T. Hannappel, E. V. Skorb: In situ characterization of interfaces relevant for efficient photo-induced reactions,
Advanced Materials Interfaces 4, p. 1601118, 2017.
[externer Link folgt]doi: 10.1002/admi.201601118
Review

[23] M. Steidl, C. Koppka, L. Winterfeld, K. Peh, B. Galiana, O. Supplie, P. Kleinschmidt, E. Runge, T. Hannappel: Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth,
ACS Nano 11, p. 8679, 2017.
[externer Link folgt]doi: 10.1021/acsnano.7b01228

[22] A. Paszuk, A. Dobrich, C. Koppka, S. Brückner, M. Duda, P. Kleinschmidt, O. Supplie, T. Hannappel: In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient,
Journal of Crystal Growth 464, p. 14, 2017.
[externer Link folgt]doi: 10.1016/j.jcrysgro.2016.11.109

[21] W. Zhao, M. Steidl, A. Paszuk, S. Brückner, A. Dobrich, O. Supplie, P. Kleinschmidt, T. Hannappel: Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy,
Applied Surface Science 392, p. 1043, 2017.
[externer Link folgt]doi: 10.1016/j.apsusc.2016.09.081

[20] O. Romanyuk, O. Supplie, T. Susi, MM. May, T. Hannappel: An ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces,
Physical Review B 94, p. 155309, 2016.
[externer Link folgt]doi: 10.1103/PhysRevB.94.155309

[19] C. Koppka, A. Paszuk, M. Steidl, O. Supplie, P. Kleinschmidt, T. Hannappel: Suppression of rotational twin formation in virtual GaP/Si(111) substrates for III-V nanowire growth,
Crystal Growth & Design 16, p. 6208, 2016.
[externer Link folgt]doi: 10.1021/acs.cgd.6b00541

[18] O. Supplie, MM. May, P. Kleinschmidt, A. Nägelein, A. Paszuk, S. Brückner, T. Hannappel: In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100),
APL Materials 3, p. 126110, 2015.
[externer Link folgt]doi: 10.1063/1.4939005

[17] A. Paszuk, S. Brückner, M. Steidl, W. Zhao, A. Dobrich, O. Supplie, P. Kleinschmidt, W. Prost, T. Hannappel: Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth,
Applied Physics Letters 106, p. 231601, 2015.
[externer Link folgt]doi: 10.1063/1.4922275

[16] O. Supplie, MM. May, C. Höhn, H. Stange, A. Müller, P. Kleinschmidt, S. Brückner, T. Hannappel: Formation of GaP/Si(100) heterointerfaces in presence of inherent reactor residuals,
ACS Applied Materials & Interfaces (Letter) 7, p. 9323, 2015.
[externer Link folgt]doi: 10.1021/acsami.5b02231

[15] O. Supplie, MM. May, G. Steinbach, O. Romanyuk, F. Grosse, A. Nägelein, P. Kleinschmidt, S. Brückner, T. Hannappel: Time-resolved in situ spectroscopy during formation of the GaP/Si(100) heterointerface,
Journal of Physical Chemistry Letters 6, p. 464, 2015.
[externer Link folgt]doi: 10.1021/jz502526e

[14] O. Supplie, S. Brückner, O. Romanyuk, H. Döscher, C. Höhn, MM. May, P. Kleinschmidt, F. Grosse, T. Hannappel: Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory,
Physical Review B 90, p. 235301, 2014.
[externer Link folgt]doi: 10.1103/PhysRevB.90.235301

[13] O. Supplie, MM. May, H. Stange, C. Höhn, HJ. Lewerenz, T. Hannappel: Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100),
Journal of Applied Physics 115, p. 113509, 2014.
[externer Link folgt]doi: 10.1063/1.4869121

[12] P. Sippel, O. Supplie, MM. May, R. Eichberger, T. Hannappel: Electronic structures of GaP(100) surface reconstructions probed with two-photon photoemission spectroscopy,
Physical Review B 89, p. 165312, 2014.
[externer Link folgt]doi: 10.1103/PhysRevB.89.165312

[11] MM. May, O. Supplie, C. Höhn, R. van de Krol, HJ. Lewerenz, T. Hannappel: The interface of GaP(100) and H2O studied by photoemission and reflection anisotropy spectroscopy,
New Journal of Physics 15, p. 103003, 2013.
[externer Link folgt]doi: 10.1088/1367-2630/15/10/103003

[10] S. Brückner, P. Kleinschmidt, O. Supplie, H. Döscher, T. Hannappel: Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient,
New Journal of Physics 15, p. 113049, 2013.
[externer Link folgt]doi: 10.1088/1367-2630/15/11/113049

[09] E. Barrigón, S. Brückner, O. Supplie, P. Kleinschmidt, I. Rey-Stolle, T. Hannappel: Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces,
Applied Physics Letters 102, p. 111608, 2013.
[externer Link folgt]doi: 10.1063/1.4798248

[08] E. Barrigón, S. Brückner, O. Supplie, H. Döscher, I. Rey-Stolle, T. Hannappel: In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient,
Journal of Crystal Growth 370, p. 173, 2013.
[externer Link folgt]doi: 10.1016/j.jcrysgro.2012.07.046

[07] O. Supplie, T. Hannappel, M. Pristovsek, H. Döscher: In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces,
Physical Review B 86, p. 035308, 2012.
[externer Link folgt]doi: 10.1103/PhysRevB.86.035308

[06] S. Brückner, H. Döscher, P. Kleinschmidt, O. Supplie, A. Dobrich, T. Hannappel:
Anomalous double-layer step formation on Si(100) in hydrogen process ambient, Physical Review B 86, p. 195310, 2012.
[externer Link folgt]doi: 10.1103/PhysRevB.86.195310

[05] H. Döscher, O. Supplie, MM. May, P. Sippel, C. Heine, AG. Munoz, R. Eichberger, HJ. Lewerenz, T. Hannappel: Epitaxial III–V Films and Surfaces for Photoelectrocatalysis,
ChemPhysChem 13, p. 2899, 2012.
[externer Link folgt]doi: 10.1002/cphc.201200390

[04] S. Brückner, O. Supplie, E. Barrigón, J. Luczak, P. Kleinschmidt, I. Rey-Stolle, H. Döscher, T. Hannappel: In situ control of As dimer orientation on Ge(100) surfaces,
Applied Physics Letters 101, p. 121602, 2012.
[externer Link folgt]doi: 10.1063/1.4754122

[03] S. Brückner, E. Barrigón, O. Supplie, P. Kleinschmidt, A. Dobrich, C. Löbbel, I. Rey-Stolle, H. Döscher, T. Hannappel: Ge(100) surfaces prepared in vapor phase epitaxy process ambient,
Physica Status Solidi RRL 6, p. 178, 2012.
[externer Link folgt]doi: 10.1002/pssr.201206028

[02] H. Döscher, O. Supplie, S. Brückner, T. Hannappel, A. Beyer, J. Ohlmann, K. Volz: Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy,
Journal of Crystal Growth 315, p. 16, 2011.
[externer Link folgt]doi: 10.1016/j.jcrysgro.2010.08.017

[01] H. Döscher, B. Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, T. Hannappel: In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100),
Journal of Vacuum Science & Technology B 28, p. C5H1, 2010.
[externer Link folgt]doi: 10.1116/1.3466529



Dissertation:

[externer Link folgt]GaPN-on-Si(100) and buried interfaces: In situ spectroscopy during MOVPE growth, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, e-publication 2016-08-04, disputation 2015-09-03, submission 2015-03-31, [externer Link folgt]urn:nbn:de:kobv:11-100239508, [externer Link folgt]doi: 10.18452/17572.



Ausgewählte nicht referierte Artikel und Konferenz-'Proceedings':

[16] O. Supplie, A. Heinisch, M. Sugiyama, T. Hannappel:
Optical in situ quantification of the Arsenic content in GaAsP graded buffer layers for III-V-on-Si tandem absorbers during MOVPE growth,
Proc. IEEE PVSC 45 / Proc. IEEE WCPEC 7, p. 3923, 2018.
[externer Link folgt]doi: 10.1109/PVSC.2018.8547955
IEEE Photovoltaic Specialists Conference, Waikoloa Village, HI, USA, 2018.

[15] A. Paszuk, O. Supplie, M. Nandy, S. Brückner, A. Dobrich, P. Kleinschmidt, B. Kim, Y. Nakano, M. Sugiyama, T. Hannappel:
As-modified Si(100) Surfaces for III-V-on-Si Tandem Solar Cells,
Proc. IEEE PVSC 45 / Proc. IEEE WCPEC 7, p. 0233, 2018.
[externer Link folgt]doi: 10.1109/PVSC.2018.8547817
IEEE Photovoltaic Specialists Conference, Waikoloa Village, HI, USA, 2018.

[14] A. Paszuk, O. Supplie, S. Brückner, M. M. May, A. Dobrich, A. Nägelein, B. Kim, Y. Nakano, M. Sugiyama, P. Kleinschmidt, T. Hannappel:
In situ control over the sublattice orientation of GaP/Si(100):As virtual substrates for tandem absorbers,
Proc. IEEE PVSC 44, p. 2538, 2017.
[externer Link folgt]doi: 10.1109/PVSC.2017.8366561
IEEE Photovoltaic Specialists Conference, Washington, WA, USA, 2017.

[13] B. Kim, K. Toprasertpong, O. Supplie, A. Paszuk, T. Hannappel, M. Sugiyama:
Efficiency of GaAsP/Si Two-junction Solar Cells with Multi-Quantum Wells: A Realistic Modeling with Carrier Collection Efficiency,
Proc. IEEE PVSC 44, p. 2524, 2017.
[externer Link folgt]doi: 10.1109/PVSC.2017.8366310
IEEE Photovoltaic Specialists Conference, Washington, WA, USA, 2017.

[12] T. Hannappel, O. Supplie, MM. May, P. Kleinschmidt, O. Romanyuk:
Comment on "Pyramidal structure formation at the interface between III/V semiconductors and silicon",
[externer Link folgt] arXiv, p. 1610.01758 [cond-mat.mtrl-sci], 2016.

[11] O. Supplie, S. Brückner, MM. May, T. Hannappel:
Scrutinising growth,
[externer Link folgt] Compound Semiconductor 21(5), p. 57, 2015.

[10] O. Supplie, M. M. May, S. Brückner, A. Nägelein, P. Kleinschmidt, T. Hannappel:
Watching the formation of the GaP/Si(100) heterointerface in situ ,
Proc. IEEE PVSC 42, p. 1, 2015.
[externer Link folgt]doi: 10.1109/PVSC.2015.7356381
IEEE Photovoltaic Specialists Conference, New Orleans, LA, USA, 2015.

[09] O. Supplie,S. Brückner, O. Romanyuk, M. M. May, H. Döscher, P. Kleinschmidt, H. Stange, A. Dobrich, C. Höhn, H.-J. Lewerenz, F. Grosse, T. Hannappel:
An experimental-theoretical atomic-scale study: In situ analysis of III–V on Si(100) growth for hybrid solar cells ,
Proc. IEEE PVSC 40, p. 2797, 2014.
[externer Link folgt]doi: 10.1109/PVSC.2014.6925510
IEEE Photovoltaic Specialists Conference, Denver, CO, USA, 2014.

[08] M. M. May, O. Supplie, C. Höhn, W.-D. Zabka, H.-J. Lewerenz, R. van de Krol, T. Hannappel:
Water-induced modifications of GaP(100) and InP(100) surfaces studied by photoelectron spectroscopy and reflection anisotropy spectroscopy,
Proc. of SPIE 8822, p. 88220M-1, 2013.
[externer Link folgt]doi: 10.1117/12.2026172
SPIE Solar Energy + Technology, San Diego, CA, USA, 2013.

[07] O. Supplie, S. Brückner, H. Döscher, P. Kleinschmidt, T. Hannappel:
From surface dimer orientations to bonds at the GaP/Si(100) heterointerface,
Proc. IPRM 25, p. MoD4-3, 2013.
[externer Link folgt]doi: 10.1109/ICIPRM.2013.6562578
International Conference on InP and Related Materials, Kobe, Japan, 2013.

[06] O. Supplie, S. Brückner, H. Döscher, P. Kleinschmidt, T. Hannappel:
III-V/Si(100) heterointerfaces studied in VPE ambient via surface dimers by in situ reflection anisotropy spectroscopy ,
Proc. IEEE PVSC 39, p. 0879, 2013.
[externer Link folgt]doi: 10.1109/PVSC.2013.6744284
IEEE Photovoltaic Specialists Conference, Tampa, FL, USA, 2013.

[05] S. Brückner, P. Kleinschmidt, O. Supplie, H. Döscher, T. Hannappel:
In situ control of step formation on Si(100) surfaces during MOVPE preparation for III-V-on-Si solar cells,
Proc. IEEE PVSC 39, p. 0886, 2013.
[externer Link folgt]doi: 10.1109/PVSC.2013.6744286
IEEE Photovoltaic Specialists Conference, Tampa, FL, USA, 2013.

[04] O. Supplie, H. Döscher, M. M. May, T. Hannappel:
Heteroepitaxial III-V on Si(100) tandem absorber structures for photoelectrolysis,
AIP Conf. Proc. 1568, p. 20, 2013.
[externer Link folgt]doi: 10.1063/1.4848082
Solar chemical energy storage, Sendai, Japan, 2012.

[03] S. Brückner, O. Supplie, E. Barrigon, A. Dobrich, J. Luczak, C. Löbbel, I. Rey-Stolle, P. Kleinschmidt, H. Döscher, T. Hannappel:
In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures,
AIP Conf. Proc. 1477, p. 32, 2012.
[externer Link folgt]doi: 10.1063/1.4753827
International Conference on Concentrating Photovoltaic Systems, Toledo, Spain, 2012.

[02] O. Supplie, T. Hannappel, M. Pristovsek, H. Döscher:
Interface and surface dielectric anisotropies of GaP/Si(100),
Proc. IPRM 24, 2012.
[externer Link folgt]doi: 10.1109/ICIPRM.2012.6403340
International Conference on InP and Related Materials, Santa Barbara, CA, USA, 2012.

[01] S. Brückner, O. Supplie, E. Barrigon, P. Kleinschmidt, A. Dobrich, I. Rey-Stolle, C. Algora, H. Döscher, T. Hannappel:
Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates,
Proc. IEEE PVSC 37, p. 002538, 2011.
[externer Link folgt]doi: 10.1109/PVSC.2011.6186464
IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.